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MITSUBISHI Nch POWER MOSFET
FS16KM-9
HIGH-SPEED SWITCHING USE
FS16KM-9
OUTLINE DRAWING
10 0.3 6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE
123 2.6 0.2
w
VDSS ................................................................................ 450V rDS (ON) (MAX) .............................................................. 0.45 ID ......................................................................................... 16A Viso ................................................................................ 2000V
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 450 30 16 48 40 -55 ~ +150 -55 ~ +150 2000 2.0
Unit V V A A W C C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS16KM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 30 -- -- 2 -- -- 6.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.35 2.80 8.0 1700 230 40 30 50 170 60 1.5 -- Max. -- -- 10 1 4 0.45 3.60 -- -- -- -- -- -- -- -- 2.0 3.13
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50
IS = 8A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) 101 7 5 3 2 100 7 5 3 2 tw=10s 100s 1ms 10ms
40
30
20
10
0
0
50
100
150
200
TC = 25C Single Pulse 10-1 DC 7 5 0 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V 10V 6V PD = 40W TC = 25C Pulse Test 5V 12
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 40W DRAIN CURRENT ID (A) 40 VGS = 20V 30 10V 6V TC = 25C Pulse Test DRAIN CURRENT ID (A) 16 20
20 5V 10 4V 0 0 10 20 30 40 50
8
4 4V 0 0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16KM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25C Pulse Test 0.8 VGS = 10V 20V
ID = 25A 16 TC = 25C Pulse Test 16A 8 8A
12
0.6
0.4
4
0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS = 50V Pulse Test 102 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
32
24
3 2 101 7 5 3 2 100 0 10 23 125C 75C
16
TC = 25C
8
0
0
4
8
12
16
20
5 7 101
23
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 103 7 5 Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) tf tr td(on)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2 102 7 5 3 2 101 0 10 23
Coss
102 7 5 Crss 3 Tch = 25C 2 f = 1MHz VGS = 0V 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16KM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 TC = 125C VGS = 0V Pulse Test 75C 24 25C
GATE-SOURCE VOLTAGE VGS (V)
16 VDS = 100V 12 200V 400V 8
SOURCE CURRENT IS (A)
80 100
Tch = 25C ID =16A
32
16
4
8
0
0
20
40
60
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 0.2 7 5 0.1 3 2 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse
1.0
0.8
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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